Research on Electron Mobility Model for Tensile Strained-Si(101) with Properties of Semiconducting Materials

Abstract:

Abstract. Mobility is one of the most important properties of semiconductor material, and it has a great impact on the property of MOS devices.In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si(101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si(101) material is made using the average momentum relaxation time method described in Ref[1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.

• Periodical: Advanced Materials Research (Volume 676)
• Pages: 8-12
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.676.8
• Online since: March 2013
• Authors: Nan Meng, Hui Yong Hu, He Ming Zhang, Xu Jia Shi, Rong Xi Xuan, Bin Wang
• Keywords: Electron, Mobility, Tensile Strain

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