Photoluminescence Properties of Cd Doped ZnO Films Obtained by PLD

Bi Ju Zheng; Wen Hu

doi:10.4028/www.scientific.net/AMR.680.70

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 680Photoluminescence Properties of Cd Doped ZnO Films...

Photoluminescence Properties of Cd Doped ZnO Films Obtained by PLD

Abstract:

Ternary polycrystalline Zn1xCdxO semiconductor films with cadmium content (x) ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn1xCdxO films decreases continuously as the Cd content x increases. Photoluminescence measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. Increasing the Cd content x also leads to the broadening of the emission peak. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn1xCdxO films potential candidate for optoelectronic device.