Lateral Non-Uniformity Charges Influence on Interface Trap Density (Dit) by Terman Method in the nMOS Fabrication

Shen Li Chen; Yet Fan Chang

doi:10.4028/www.scientific.net/AMR.690-693.1846

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Lateral Non-Uniformity Charges Influence on Interface Trap Density (D_it) by Terman Method in the nMOS Fabrication

Abstract:

Generally speaking, the oxide interface quality can be determined by the interface trap density (D_it) distribution. In this paper, the D_it quantity obtained from the Terman method, which it is assumed that the D_it is equal to zero at the beginning for simulating the D_it effect in ultra-thin oxide. However, the lateral non-uniformity charges have existed in the oxide layer, which maybe obtained an equivalent D_it density not equal to zero also producing an equivalent D_it value. And, such faked D_it will be resulted in an error in high frequency measurement. Fortunately, it can be solved by differentiating technique to obtain an accuracy D_it quantity.

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Periodical:

Advanced Materials Research (Volumes 690-693)

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1846-1850

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.1846

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Online since:

May 2013

Authors:

Shen Li Chen, Yet Fan Chang

Keywords:

Interface Trap Density (D_it), Lateral Non-Uniformity Charge, Terman Method

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