Effect of Insulators on the Power Consumption and the Oxygen Content of Si Ingots in Czochralski Growth

Abstract:

The effect of insulators in a Czochralski furnace on the power consumption and the oxygen content in the melts as well as in the Si ingots was studied without considering a radiation shield. The top insulator showed better results than the other two insulators for the power consumption and Si melt temperature. The interface at the center of the melt descended in the all conditions of installing the insulators, and all interfaces were concave down. The oxygen content in the Si crystal decreased as the thickness of insulators was decreased for the top and top-side insulators, while increased for the bottom insulator.

• Periodical: Advanced Materials Research (Volumes 690-693)
• Pages: 2969-2972
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.690-693.2969
• Online since: May 2013
• Authors: Jong Sik Shin, Wang Ki Choi, Ki Young Kim
• Keywords: Czochralski Silicon Growth, Interface Shape, Oxygen Content, Power Consumption

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