Inaln/GaN HEMT Small-Signal Parameter Extraction

Abstract:

We use S-Parameter Methodto extract device parameter of InAlN/GaN HEMT in this paper. We find thatparasitic capacitance and parasitic inductance can be extracted in traditionaltest structure method, but do nothing about parasitic resistor. Cold parameter methodcan extract parasitic resistor efficiently, but there is greater error inparasitic capacitance and parasitic inductance extraction. We propose a methodwhich combines test structure method and cold parameter method to extract parasitic parameteraccurately. We can acquire intrinsic parameters through getting rid ofparasitism parameters, and can fitting test outcome satisfactorily. It canreflect accurately the physical characteristics of GaN HEMT devices, and givesfeedback and guidance to device technology at the same time.

• Periodical: Advanced Materials Research (Volumes 690-693)
• Pages: 564-568
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.690-693.564
• Online since: May 2013
• Authors: Xiao Wei Zhang, Peng Xu*, Ke Jin Jia, Zhi Hong Feng, Zheng Ping Zhao
• Keywords: Parasitic Capacitance, Parasitic Inductance, sGaN HEMT

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