Influence of Deposition Temperature of ZnTe Films on Silicon by Thermal Evaporation

Jenn Sen  Lin; Shih Syun Wei; Yi Ting Yu; Cheng Hsing Hsu; Wen Hua Kao; Wen Shiush Chen; Ching Fang Tseng; Chun Hung Lai; Jian Ming Lu; Shin Pon Ju

doi:10.4028/www.scientific.net/AMR.690-693.569

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 690-693Influence of Deposition Temperature of ZnTe Films...

Influence of Deposition Temperature of ZnTe Films on Silicon by Thermal Evaporation

Abstract:

The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are shown to be dependent on the deposition temperature. The highest carrier concentration of 9.1×1014 cm-3, the lowest resistivity of 9.9 Ω-cm and the largest mobility of 667 cm2V-1S-1 are presented at a deposition temperature of 580oC, respectively. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes.

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Periodical:

Advanced Materials Research (Volumes 690-693)

Pages:

569-572

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.569

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Online since:

May 2013

Authors:

Jenn Sen Lin, Shih Syun Wei, Yi Ting Yu, Cheng Hsing Hsu, Wen Hua Kao, Wen Shiush Chen, Ching Fang Tseng, Chun Hung Lai, Jian Ming Lu, Shin Pon Ju

Keywords:

Electrical Properties, Thermal Evaporation, ZnTe Films

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