Study the I-V and C-V Characterization of n-ZnO/p-Si Heterojunction

Abstract:

A type n conductance of ZnO thin film was deposited on the p-Si filim by magnetron sputtering Al doped ZnO ceramic target, and the ZnO/p-Si heterojunction was preparated. The photoelectric properties, charge carrier transport mechanism were studied by testing the I-V, C-V characteristics with illumination and without illumination. The results shows that there exists a good rectifying properties and photoelectric response for ZnO/p-Si heterojunctions, and can be widely used in photoelectric detection and fields of solar cells. As the conduction band and valence band offset in the ZnO/p-Si heterojunction is too big, the current transport mechanism is dominated by the space-charge limited current (SCLC) conduction at the forward voltage exceeds 1 V. The results suggest the existence of a large number of interface states in ZnO/p-Si heterojunction, and the interface states can be reduced and the photoelectric properties can be further improved.

• Periodical: Advanced Materials Research (Volumes 690-693)
• Pages: 607-610
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.690-693.607
• Online since: May 2013
• Authors: Xiong Chao*, Li Hua Ding, Xiao Jin, Chen Lei, Hong Chun Yuan, Xi Fang Zhu, Zhang Yan, Xiang Cai Zhou
• Keywords: Characteristics of C-V, Characteristics of I-V, Charge Carrier Transport Mechanism, P-Si Heterojunctioni

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