Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Meng Li; Sung Kwen Oh; Hong Sik Shin; Hi Deok Lee

doi:10.4028/www.scientific.net/AMR.699.817

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 699Improvement of Thermal Stability of Nickel...

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Abstract:

In this paper, Ni-silicide formed by co-sputtering of Ni and Ti on a boron cluster (BF₂, B₁₈H₂₂) implanted ultra-shallow source/drain for MOSFET (metal oxide semiconductor field effect transistor) is proposed. Ni and Ti with a TiN capping layer were deposited by co-sputtering on boron cluster implanted wafer. By analysis of its sheet resistance, interfacial structures, surface morphological stability, and phase formation after post-silicidation annealing, thermal stability of Ni-silicide was found to be improved a lot.

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Periodical:

Advanced Materials Research (Volume 699)

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817-821

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.699.817

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Online since:

May 2013

Authors:

Meng Li, Sung Kwen Oh, Hong Sik Shin, Hi Deok Lee

Keywords:

Boron Cluster, Co-Puttering, Heavy Dopant, Nickel Silicide, Thermal Stability, Titanium

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References

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