Synthesis of ZnO Thin Film on Porous Silicon by Spin Coating in Various Low Molarities Precursor

Abstract:

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.

• Periodical: Advanced Materials Research (Volume 701)
• Pages: 167-171
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.701.167
• Online since: May 2013
• Authors: Kevin Alvin Eswar, Azlinda Ab Azlinda, Mohd Husairi Fadzilah Suhaimi, M. Rusop, Saifollah Abdullah
• Keywords: Electrochemical Etching, Low Molarities, Photoluminescence (PL), Porous Silicon, Sol-Gel Spin-Coating, Zinc Acetate

References

[1] Y. Zhang, W. Fa, F. Yang, Z. Zheng and P. Zhang, Ionics 16 (9), 815-820 (2010).

[2] M. G. Varnamkhasti, H. R. Fallah and M. Zadsar, Vacuum 86 (7), 871-875 (2012).

[3] S. K. Min, G. Y. Kwang, L. Jae-Young, K. Soaram, N. Giwoong, L. Dong-Yul, S. K. Jin and S. K. Jong, Journal of the Korean Physical Society 59 (3), 2354 (2011).

[4] F. Yang, S. Ma, X. Zhang, M. Zhang, F. Li, J. Liu and Q. Zhao, Superlattices and Microstructures 52 (2), 210-220 (2012).

[5] M. Caglar, S. Ilican, Y. Caglar and F. Yakuphanoglu, Applied Surface Science 255 (8), 4491-4496 (2009).

DOI: 10.1016/j.apsusc.2008.11.055

[6] R. G. Singh, F. Singh, V. Agarwal and R. M. Mehra, Journal of Physics D: Applied Physics 40 (10), 3090-3093 (2007).

[7] Q.-l. Ma, B.-g. Zhai and Y. M. Huang, Journal of Sol-Gel Science and Technology (2012).

[8] M. S. Kim, S. Kim, G. Nam, D.-Y. Lee and J.-Y. Leem, Optical Materials 34 (9), 1543-1548 (2012).

[9] H. Cai, H. Shen, Y. Yin, L. Lu, J. Shen and Z. Tang, Journal of Physics and Chemistry of Solids 70 (6), 967-971 (2009).

[10] H. C. Hsu, C. S. Cheng, C. C. Chang, S. Yang, C. S. Chang and W. F. Hsieh, Nanotechnology 16 (2), 297-301 (2005).

[11] E. Kayahan, Journal of Luminescence 130 (7), 1295-1299 (2010).

[12] G. Singh, S. B. Shrivastava, D. Jain, S. Pandya and V. Ganesan, Defect and Diffusion Forum 293, 99-105 (2009).

DOI: 10.4028/www.scientific.net/ddf.293.99

[13] M. Wang, J. Wang, W. Chen, Y. Cui and L. Wang, Materials Chemistry and Physics 97 (2-3), 219-225 (2006).

[14] M. Balucani, P. Nenzi, E. Chubenko, A. Klyshko and V. Bondarenko, Journal of Nanoparticle Research 13 (11), 5985-5997 (2011).

DOI: 10.1007/s11051-011-0346-7

[15] X. L. Huang, S. Y. Ma, L. G. Ma, H. Q. Bian and C. Su, Physica E: Low-dimensional Systems and Nanostructures 44 (1), 190-195 (2011).

DOI: 10.1016/j.physe.2011.08.013

[16] S. K. Min, G. Y. Kwang, L. Jae-Young, K. Soaram, N. Giwoong, Y. K. Do, K. Sung-O, L. Dong-Yul, S. K. Jin and S. K. Jong, Journal of the Korean Physical Society 59 (2), 346 (2011).

[17] M. S. Kim, K. G. Yim, D. Y. Kim, S. Kim, G. Nam, D.-Y. Lee, S.-O. Kim, J. S. Kim, J. S. Kim, J.-S. Son and J.-Y. Leem, Electronic Materials Letters 8 (1), 75-80 (2012).

DOI: 10.1007/s13391-011-0130-y