Evaluation on Diffusion of Bipolar Junction Transistor (BJT) Charge-Carrier and its Dependency on Total Dose Irradiation

Abstract:

Electronic device that subjected to various effects by radiations can cause small interferences such as noises in the circuit. These effects are especially critical in operating environment such as outer space, where radiation comes in stronger and more frequent. In this research, analytical study on the effects of ionizing radiation induced by ⁶⁰Co gamma (γ) rays in bipolar junction transistor (BJT) devices had been performed. It was found that the high energy of the radiation allows more valence electrons to be excited to the conduction band in the BJT. This leads to the production of a large number of excited atoms and increases the holes in the valence band. The increase of holes in the base region due to trapping will increase the probability of recombination and reducing the number of electrons that reaches the collector region. This ionizing radiation effect was found to arouse either a permanent or temporarily damage in the devices depending on their current drives and total dose absorbed.

• Periodical: Advanced Materials Research (Volume 701)
• Pages: 71-76
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.701.71
• Online since: May 2013
• Authors: Haider F. Abdul Amir, Fuei Pien Chee
• Keywords: Bipolar Junction Transistor (BJT), In Situ, Onizing Radiation, Recombination

References

[1] A. L. Bogorad, J. J. Likar, S. K. Moyer, A. J. Ditzler, G. P. Doorley and R. Herschitz: Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices. Radiation Effects Data Workshop, IEEE (2008), pp.124-130.

DOI: 10.1109/redw.2008.29

[2] Department of Defense: MIL-STD-883 Test Method 1019.7 Ionizing radiation (Total Dose) Test Procedure. Test Method Standard Microcircuits (2006).

[3] J. Medalia: Detection of Nuclear Weapons and Materials: Science, Technologies, Observations. Congressional Research Service (2010).

[4] J. S. Lewis: Astronomical perspective. International Geophysics, Academic Press 87 (2004), pp.7-49.

[5] P. J. Baines and A. Côté: Promising Confidence- and Security-Building Measures for Space Security. A Safer Space Environment 4 (2009), pp.5-16.

[6] P. J. Sellin and J. Vaitkus: New Materials for Radiation Hard Semiconductor Detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 557.2 (2006), pp.479-489.

DOI: 10.1016/j.nima.2005.10.128

[7] S. A. Francis, A. Dasgupta, and D. M. Fleetwood: Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1/f Noise of nMOS and pMOS Transistors. Electron Devices, IEEE Transaction 57.2 (2010), pp.503-510.

DOI: 10.1109/ted.2009.2036297