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Electrical Transport Properties in Ta-Doped SnO2 Thin Films

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Abstract:

The structure, carrier concentration and low temperature magnetoresistance of Tantalum-doped Tin oxide thin films prepared by RF magnetron sputtering method have been investigated. Hall coefficient is negative at all measuring temperatures, which confirms the n-type characteristic of the films with metallic characteristic. The low temperature magnetoresistance measurement show negative magnetoresistance at all measured temperatures from 2 to 30 K. However, weak-localization theories can not explain the behavior of the negative magnetoresistance of our samples. We fitted the magnetoresistance data of the samples with semiempirical expression that takes into account the third order sd exchange Hamiltonians. The theory and experiment are in excellent agreement. This strongly suggests that the magnetoresistance in SnO2: Ta film originates from the scattering of conduction electrons due to localized magnetic moments.

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Periodical:

Advanced Materials Research (Volumes 706-708)

Pages:

379-382

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.706-708.379

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Online since:

June 2013

Authors:

Hai Bin Wu, Bing Ping Gou, Hai Lian Zhang, Wan Qiang Han

Keywords:

Electronic Transport, Magnetoresistance, Magnetron Sputtering, Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] X.D. Liu, E.Y. Jiang, D.X. Zhang: J Appl Phys Vol. 104(2008), p.073771

Google Scholar

[2] S. Bunju, S. Kazumasa, Yukio etal: J Phys Soc Jpn Vol. 76(2007), p.074718

Google Scholar

[3] H. Toyosaki, M. Kawasakiand, S. Tokura: Appl Phys Lett. Vol. 93(2008), p.132109

Google Scholar

[4] L.C. Tien, D.P. Norton, J.D. Budai: Materials Research Bulletin, Vol. 44(2009), p.6

Google Scholar

[5] Y.W. Kim, S.W. Lee, H. Chen: Thin Solid Films Vol. 405(2002), p.256

Google Scholar

[6] R.P. Khosla, J.R. Fischer: Phys Rev B, Vol.2(1970), p.4084

Google Scholar

[7] Y. Toyozawa:J Phys Soc Jpn, Vol.17(1962), p.986

Google Scholar

[8] S. Hikami, I. Larkin, Y. Nagaoka: Prog Theor Phys, Vol.63, (1980), p.707

Google Scholar

[9] P.A. Lee, T.V. Ramakrishnan: Rev Modern Phys, Vol.57(1985), p.287

Google Scholar

[10] H.H. Nguyen, P. Nathalie, S. Joe: Phys Rev B, Vol.77(2008), p.033205

Google Scholar

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