Graphene-Silicon Schottky Junction Fabricating by Laser Reduced Graphene Oxides

Abstract:

Reported here is a new method of fabricating the graphene/silicon schottky junction. Using a femtosecond laser, graphene oxides are reduced to graphene and behave a metal. The junction of reduced GO and Si shows rectifying behavior indicating that the junction is schottky junction. Take advantage of the laser fabricating method, one can get reduced GO at any position on the substrate. Xps spectra shows that the reduced GO has only 12% oxygen content, and it is truly have a good conductivity similar to metal. This method opens a new effective way to graphene-based micro nano electronics.

• Periodical: Advanced Materials Research (Volume 709)
• Pages: 139-142
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.709.139
• Online since: June 2013
• Authors: Rui Qiang Shao
• Keywords: Graphene Oxide, Laser, Schottky Junction

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