NMOS Performance of Low Boron Activation on Group V for Ultra-Shallow Junction Formation

Abstract:

Fabrication of ultra shallow junctions with low contact resistances is desired to advance current CMOS technology. The low Boron activation on Group V for ultra shallow junction formation will makes the chip fabrication works effectively. SilvacoTCAD (Technology Computer Aided Design) manages simulation tasks and analyzing simulation results when ultra-shallow junction formation is using low-boron activation on Phosphorus, Antimony and Arsenic.A stimulate process like implantation, diffusion and dopant activation and epitaxial growth in different semiconductor materials has been analyzed as well as investigate the effects of energy of boron ion beams on ultra shallow junction formation.As a result, the electrical characteristics of NMOS structure by obtaining graph of I_D V_GS and I_D V_DShas been studied when there are variations in junction length (X_j), and gatelength (L_g).

• Periodical: Advanced Materials Research (Volume 716)
• Pages: 248-253
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.716.248
• Online since: July 2013
• Authors: Muzalifah Mohd Said, Zul Atfyi Fauzan Mohammed Napiah, Faiz Arith, Zarina Mohd Noh
• Keywords: Boron Activation, Group V Elements, NMOS, SilvacoTCAD, Ultra-Shallow Junction

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