Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

Sani Klinsanit; Itsara Srithanachai; Surada Ueamanapong; Sunya Khunkhao; Budsara Nararug; Chaba Suriya-Amaranout; Surasak Niemcharoen

doi:10.4028/www.scientific.net/AMR.717.113

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Preparation and Characterization of Silica Aerogel Immobilized with Cyanex 301 for Extraction of Zn(II)
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Study on Schottky Diode Characteristics Improving by X-Ray Irradiation
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 717Study on Schottky Diode Characteristics Improving...

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

Abstract:

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

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Periodical:

Advanced Materials Research (Volume 717)

Pages:

113-116

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.717.113

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Online since:

July 2013

Authors:

Sani Klinsanit, Itsara Srithanachai, Surada Ueamanapong, Sunya Khunkhao, Budsara Nararug, Chaba Suriya-Amaranout, Surasak Niemcharoen

Keywords:

Built in Voltage, Schottky Diode, Soft X-Ray Annealing

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