Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector

Yuan Yuan Sun; Xi He Zhang; Qiu Rui Jia; Zheng Li; Shi Bo Liu

doi:10.4028/www.scientific.net/AMR.717.205

Paper Titles

Melting Temperature of FeO under Pressure
p.184

A Study on the Shear Characteristics of Fine Blanking for Al 5052 and Eco-Al 5052 Sheet
p.188

Slurry Erosion Model for Wear Performance Prediction of Tool Steel
p.194

Flow Stress Model Based on Internal Variables
p.200

Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector
p.205

Microstructure Analysis of Post Weld Aging in Duplex Stainless Steel Welds
p.210

Analysis on the Residual Stresses in Functionally Gradient Fe360/Glass-Ceramic Coatings
p.215

Influence of Grain Size and Rolling Direction on Stress Measurement by Ultrasonic Surface Wave (Part 2)
p.221

Influence of Material Coating on Stress Measurement by Ultrasonic Surface Wave (Part 1)
p.227

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 717Research on the Preparation Technology of GaN...

Research on the Preparation Technology of GaN Ultraviolet Photoelectric Detector

Abstract:

GaN semiconductor was one of the most promising semiconductor materials with direct wide band gap transition. It was regarded as one of the most desirable materials to prepare short wavelength optoelectronic devices for the good optoelectronic properties and excellent mechanical behavior. In this paper, n and p-type GaN films were prepared on Al₂O₃ substrates by MOCVD. Through the optimization of parameters, we obtained effective in doped Mg and carrier concentration for 10¹⁹_.MSM structural ultraviolet photoelectric devices were prepared on GaN film by two step epitaxy growth method. The highest transmittance and best epitaxial growth quality has been gained at 570°C for buffer layer of the samples.

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Periodical:

Advanced Materials Research (Volume 717)

Pages:

205-209

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.717.205

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Online since:

July 2013

Authors:

Yuan Yuan Sun, Xi He Zhang, Qiu Rui Jia, Zheng Li, Shi Bo Liu

Keywords:

GaN, MOCVD, Photoelectric Detector, Preparation, Ultraviolet

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