Annealing Temperature Effect on the Photoluminescence Properties of Er-Doped Silicon-Rich Silicon Oxide Films

Chang Qing Li; Pei Jia Liu; Yong Mei Wang; K. Murakami

doi:10.4028/www.scientific.net/AMR.721.16

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 721Annealing Temperature Effect on the...

Annealing Temperature Effect on the Photoluminescence Properties of Er-Doped Silicon-Rich Silicon Oxide Films

Abstract:

Er-dispersed silicon-rich silicon oxide (SRSO:Er) films have been fabricated by pulsed laser ablation technique. After deposition, the films were annealed in Ar ambient at different temperatures for 30 min to generate SiO₂ films containing Si nanocrystals (Si-nc) and Er ions. The relationship between Er photoluminescence (PL) intensity and annealing temperature was investigated by PL spectrums analysis at room temperature. Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray Spectrometer (EDS) were used to observe the samples. Experimental results show that high-density Si-nc generate when the annealing temperature increases to 1000°C, however, PL intensity of Er decreases due to Er atoms segregated out in SiO₂ film and formed large particles.

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Advanced Materials Research (Volume 721)

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16-19

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https://doi.org/10.4028/www.scientific.net/AMR.721.16

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Online since:

July 2013

Authors:

Chang Qing Li, Pei Jia Liu, Yong Mei Wang, K. Murakami

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EDS, Photoluminescence (PL), Si Nanocrystals, TEM

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