Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

Ying Zhen Li; Ping Fan; Zhuang Hao Zheng; Peng Juan Liu; Qing Yun Lin; Jing Ting Luo

doi:10.4028/www.scientific.net/AMR.734-737.2559

Paper Titles

Synthesis of LiFePO₄/C Composite Cathode Materials by Solid State Method Using Mixed Iron Sources
p.2541

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target
p.2545

The Laboratory Evaluation of Several Polymer Solution Performances
p.2549

The Synthesis and Crystal Structure of a New 1-D Co (II) Complex Based on Boronic Acid Ligand
p.2553

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films
p.2559

Transformation Behaviors of U(VI) on Irons Hydroxide Colloids
p.2563

VO₂ Thin Films Deposited on ZnOBuffer Layer
p.2568

Working Pressure Dependence of Structure and Optical Performance of Zinc Oxide Thin Films by Magnetron Sputtering
p.2572

Prepared for Potassium Sulfate of the Orthogonal Test in K-Feldspar-Phosphogypsum-Coke System
p.2576

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 734-737Thermoelectric Characterization of Direct Current...

Thermoelectric Characterization of Direct Current Magnetron Co-Sputtering Zinc Antimonide Thin Films

Abstract:

Direct current magnetron co-sputtering was used to deposit zinc antimonide thin films on BK7 glass substrates at room-temperature. Then the films were annealed at 573 K to 673 K for 1 hour in Ar atmosphere. The results indicate that the Seebeck coefficient of the thin films increase from 30.5 μVK^-1to 132.5 μVK^-1 when the annealing temperature changed. The electrical conductivity of the thin films increases from 3.45×10³ to 6.86×10³ Sm^-1and the Power Factor is enhanced greatly from 0.03×10^-4 to 0.99×10^-4 Wm^-1K^-2 when the annealing temperature reached 598 K. X-ray diffraction result shows that the major diffraction peaks of the thin films match those of β phase Zn₄Sb₃ and high crystalline thin films are achieved after annealing.