The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

Chao Ming Chen; Ping Fan; Guang Xing Liang; Zhuang Hao Zheng; Dong Ping Zhang; Jun Zhao

doi:10.4028/www.scientific.net/AMR.734-737.2545

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 734-737The Characterization of CIGS Thin Films Prepared...

The Characterization of CIGS Thin Films Prepared by Ion Beam Sputtering Deposition from a Quaternary Target

Abstract:

This study reports the successful preparation of Cu (In, Ga)Se₂ (CIGS) thin film solar cells by ion beam sputtering with a chalcopyrite CIGS quaternary target. The films were fabricated with different beam currents. The thin films were characterized with X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and hall effect-measurement system to study the microstructures, composition, surface morphology and electrical properties, respectively. Experimental results show that both the films are chalcopyrite structure, the Ga/(In+Ga) ratio, Cu/(In+Ga) ratio and Se/(Cu+In+Ga) ratio are decrease with the beam currents increase, the surfaces morphology of the films are dense, and the resistivity of the film deposited with the beam current of 40mA is 0.56Ωcm, with a carrier concentration of 4.11Χ10¹⁸cm^-3 and mobility of 2.73cm²V^-1s^-1. The resulting film exhibited p-type conductivity.

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Advanced Materials Research (Volumes 734-737)

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2545-2548

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.734-737.2545

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August 2013

Authors:

Chao Ming Chen, Ping Fan, Guang Xing Liang, Zhuang Hao Zheng, Dong Ping Zhang, Jun Zhao

Keywords:

CIGS, Ion-Beam Sputtering, Thin Film

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