Thick Epitaxy Stepper Method for Special-Type Device

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Abstract:

A stepper lithography method for thick epitaxy of special-type device was proposed. In this method, a mask with both alignment mark for proximity lithography and identification mark for stepper equipment was designed to solve the problem of precise alignment to patterns before thick-layer epitaxy and stepper lithography after thick-layer epitaxy. Using this method, the accuracy for alignment of patterns before and after thick-layer epitaxy reached 0.5 μm. This pattern alignment method special for thick-layer epitaxy is also applicable for stepper lithography of VDMOS with NBL, super-junction VDMOS, high-voltage complementary bipolar device and high-voltage BCD device.

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222-225

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August 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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