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Thick Epitaxy Stepper Method for Special-Type Device
Abstract:
A stepper lithography method for thick epitaxy of special-type device was proposed. In this method, a mask with both alignment mark for proximity lithography and identification mark for stepper equipment was designed to solve the problem of precise alignment to patterns before thick-layer epitaxy and stepper lithography after thick-layer epitaxy. Using this method, the accuracy for alignment of patterns before and after thick-layer epitaxy reached 0.5 μm. This pattern alignment method special for thick-layer epitaxy is also applicable for stepper lithography of VDMOS with NBL, super-junction VDMOS, high-voltage complementary bipolar device and high-voltage BCD device.
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222-225
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Online since:
August 2013
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© 2013 Trans Tech Publications Ltd. All Rights Reserved
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