Power Loss Analysis Based on Leakage Currentin PN Junctions

Weera Pengchan; Toempong Phetchakul; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.739.90

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 739Power Loss Analysis Based on Leakage Currentin PN...

Power Loss Analysis Based on Leakage Currentin PN Junctions

Abstract:

This paper is proposed to analyze the power loss from leakage current in p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard 0.8 micron CMOS technology. The diode fabricated by the ion implantation process with two different condition. The reverse current and voltage (I-V)characteristics at varied temperature of p-n junctions have been measured. The power loss coefficient can be extracted from the leakage current versus temperature. Form the derivative of leakage current with temperature, the power loss with prediction trend curve can be obtained.

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Periodical:

Advanced Materials Research (Volume 739)

Pages:

90-93

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.739.90

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Online since:

August 2013

Authors:

Weera Pengchan, Toempong Phetchakul, Amporn Poyai

Keywords:

Defect, Fabrication, Leakage Current, Pn Junction, Power Loss

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