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Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

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Abstract:

Ga2O3 thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3 films were investigated including the influence by annealing for the obtained films. The Ga2O3 films on sapphire () and () substrate are α-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gap Eg was about 4.755.15 eV. The Eg of the samples increases after annealing at 900 °C.

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Periodical:

Advanced Materials Research (Volume 746)

Pages:

369-373

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.746.369

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Online since:

August 2013

Authors:

Yu Lv, Wei Mi, Cai Na Luan, Jin Ma

Keywords:

MOCVD, Optical Property, Structure, Thin Film, α-Ga2O3

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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