Optical Probe in MgZnO Alloys with Varied Mg Ratios by Metalorganic Chemical Vapor Deposition

Abstract:

We present a study on five Mg_xZn_1-xO samples with varied x (x = 0, 0.01, 0.06, 0.10 and 0.14), grown on sapphire substrate by Metalorganic Chemical Vapor Deposition (MOCVD). Combined photoluminescence (PL) and Raman scattering studies were carried out over a temperature range of 80K-470K, under the excitation of UV 325 nm. Temperature dependence of the PL for MgZnO with x = 0, 0.01 and 0.06 are shown. The resonance Raman longitudinal optical (LO) multiple modes are exhibited for MgZnO with x = 0.06, 0.10 and 0.14 over all temperature range. Raman shifts exhibit a quadratic dependence on temperature in the measured temperature range. These dependences can be calculated, based upon a model involving three-and four-phonon coupling. We attribute both the thermal expansion and four-phonon terms in the four-phonon anharmonic processes to describe the change of Raman shift with temperature.

• Periodical: Advanced Materials Research (Volume 746)
• Pages: 406-410
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.746.406
• Online since: August 2013
• Authors: Xiang Ping Shu, Cheng Chen, Yi Ting He, Zhi Ren Qiu, Dong Sing Wuu, Zhe Chuan Geng
• Keywords: MgZnO, MOCVD, Photoluminescence (PL), Raman Scattering

References

[1] M. D. Neumann, C. Cobet, N. Esser, B. Laumer, T. A. Wassner, M. Eickhoff, M. Feneberg, and R. Goldhahn, J. Appl. Phys. 110, 013520 (2011).

DOI: 10.1063/1.3606414

[2] Leah Bergman, John L. Morrison, Xiang-Bai Chen, Jesse Huso, and Heather Hoeck, Appl. Phys. Lett. 88, 023103 (2006).

DOI: 10.1063/1.2163991

[3] Jesse Huso, John L. Morrison, James Mitchell, Erin Casey, Heather Hoeck, Chris Walker, Leah Bergman, W. M. Hlaing Oo, and M. D. Mc Cluskey, Appl. Phys. Lett. 94, 061919 (2009).

DOI: 10.1063/1.3081628

[4] Zhe Chuan Feng, Zinc Oxide and related Materials, CRC Talor and Francis (2012).

[5] N. B. Chen, C. H. Sui, Materials Science and Engineering B. 126, 16–21 (2006).

[6] A. Ohtomo, M. Kawasaki, T. Koida, K. Masubuchi, H. Koinuma, Y. Sakurai, Y. Yoshida, T. Yasuda, and Y. Segawa, Appl. Phys. Lett. 72, 2466 (1998).

DOI: 10.1063/1.121384

[7] Pankove J I. Optical Processes in Semiconductors. Princeton Press. 27 (1973).

[8] Claus Klingshirn, Robert Hauschild, Johannes Fallert, and Heinz Kalt, Phys. Rev. B 75, 115203 (2007).

[9] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S. -J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).

DOI: 10.1063/1.1992666

[10] H. Iwanaga, A. Kunishige, S. Takeuchi, J. Materials Science 35, 2451 -2454 (2000).

[11] Ramon Cuscó, Esther Alarcón-Lladó, Jordi Ibáñez, and Luis Artús, Phy Review B 75, 165202 (2007).

[12] W. S. Li, Z. X. Shen, Z.C. Feng and S. J. Chua, Surf. Interface Anal. 28, 173 (1999).

[13] Hua Tang and Irving P. Herman, Phys. Rev. B 43, 2299 (1991).