The PTCR Effect Induced by Grain Boundary Segregation in Acceptor

Chao Fang; Liang Yan Chen

doi:10.4028/www.scientific.net/AMR.750-752.1003

Paper Titles

The Effect of the Horizontal Distance between the Permanent Magnets on the Levitation Force in Hybrid Magnetic Levitation System
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Photoluminescent Characteristics of ZnS Quantum Dots Synthesized in Non-Aqueous-Phase
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Polarization Properties of a Nano-Particle Array Grating on GaN-Based LED
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Performance and Design of an SRM with Amorphous Stator
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The PTCR Effect Induced by Grain Boundary Segregation in Acceptor
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Enhanced Luminescence of Terbium Complexes with 2,3-Pyrazinedicarboxylate by Y(III) Doping
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High Density Formation of Iron Nanodots on SiO₂ Induced by Remote Hydrogen Plasma
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Thermodynamic Performance Characteristics of a Regenerative Brayton Refrigeration Cycle Using Gd_0.45Tb_0.55 and Gd as the Working Substance
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Microwave Dielectric Properties of Eu₄Ti₃O₁₂ Ceramics via Sol-Gel Method
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The PTCR Effect Induced by Grain Boundary Segregation in Acceptor

Abstract:

The conductive properties of donor doped BaTiO₃ semiconductor ceramic was studied with a quantitative model in this paper. Considering the influence of acceptor grain boundary segregation, a differential equation of electron level was established. According to a four order Runge-Kutta formula, the energy level of the grain boundary barrier was obtained at different temperatures numerically. Further, the PTCR effect of BaTiO₃ semiconductive ceramics was calculated.