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Structure and Photoelectric Properties of Dy Doped CdS Polycrystalline Thin Films
Abstract:
Using chemical bath deposition (CBD) deposited CdS thin films for two times and prepared CdS films contained different thickness Dy-doping layer by connecting using the vacuum electron beam evaporation method, then studied the structure, surface morphology, optical and electrical properties of the films. The results show that no-doped CdS films are the cubic structure and preferentially oriented in the (111) directions. Its conductive type is N type. After Dy doping the CdS thin films are mixed structure by cubic and hexagonal phase, the conductive type is still N type, the uniformity and compactness of the films are improved. At the same time, the proportion of Cd and S atoms in Dy-doping films are more close to the stoichiometric ratio. Dy-doping can also reduce the resistivity of the films, result in an increase of carrier concentration and improve the transmittance in the visible region.
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1901-1905
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August 2013
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© 2013 Trans Tech Publications Ltd. All Rights Reserved
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