A Newly Developed Self-Bonded SiC Refractory

Abstract:

Based on SiC aggregate, SiC powder and ultra-fine SiC powder as the main starting materials and B₄C as additive, the newly-developed self-bonded SiC material was pressed and fired at 2200°C for 10 hours in Ar environment in the high-temperature furnace. The phase composition and microstructure were investigated. In the paper, traditional self-bonded SiC material and Si3N4-bonded SiC material were taken for comparison with the newly-developed self-bonded SiC material in terms of strength, thermal conductivity, cryolite resistance, molten alkali resistance and oxidation resistance etc. The results show that the newly-developed self-bonded SiC material contains 98.42% α-SiC and presents obvious higher thermal conductivity than traditional self-bonded SiC material and much better cryolite resistance, molten alkali resistance and oxidation resistance than traditional self-bonded SiC and Si3N4-bonded SiC materials.

• Periodical: Advanced Materials Research (Volumes 750-752)
• Pages: 2078-2083
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.750-752.2078
• Online since: August 2013
• Authors: Long Gang Wan*, Zhi Gang Huang, Shao Rong Song, Jia Ping Wang, Jie Li
• Keywords: Cryolite Resistance, Molten Alkali Resistance, Newly-Developed Self-Bonded SiC, Oxidation Resistance, Thermal Conductivity (TC), α-SiC

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