RE-Boronizing below Beta Transus Temperature on TC4 Titanium Alloy Surface

Jin Sheng Li; Feng Hua Li; Li Lei; Xiao Hong Yi; Zhan Guo Fan; Dian Yao Gong

doi:10.4028/www.scientific.net/AMR.750-752.651

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752RE-Boronizing below Beta Transus Temperature on...

RE-Boronizing below Beta Transus Temperature on TC4 Titanium Alloy Surface

Abstract:

Ti6Al4V (TC4) slices were boronized with rare earth oxide (RE) addition in the agent at 950°C (below β phase transus of TC4). The morphology, phases, properties and structures of TC4 matrix and boride layers were studied. The results show that the boride layer on the surface of TC4 consists of TiB₂ and TiB dual compounds. The boride layer is compact, uniform and less porous compared with that obtained at 1050°C (above β phase transus of TC4), and the hardness profile and brittleness of the layers are improved to a certain extent. Lower temperature boronizing can effectively prevent the growth of coarse β phase grains. Duplex microstructure is obtained in TC4 matrix, and the work piece distortion is reduced.

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Advanced Materials Research (Volumes 750-752)

Pages:

651-654

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.750-752.651

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Online since:

August 2013

Authors:

Jin Sheng Li, Feng Hua Li, Li Lei, Xiao Hong Yi, Zhan Guo Fan, Dian Yao Gong

Keywords:

Boronized Layer, Pack Boronizing, TC4 Titanium Alloy, β Phase Transus Temperature

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References

[1] K.G. Budinski: Wear Vol. 151(1991), p.203.

Google Scholar

[2] F. Alonso, J.J. Ugarte, D. Sansom, J.L. Viviente and J.I. Oñate: Surf. & Coat. Tech. Vol. 83(1996), p.301.

Google Scholar

[3] X.B. Xiong, H.J. Li, J.F. Huang, G.L. Sun and M. Huang: Rare Metals Letters, Vol. 3(2004), p.4(In Chinese).

Google Scholar

[4] N.M. Lin, X.B. Huang, J.J. Zou, X.Y. Zhang, L. Qin, A.L. Fan and B. Tang: Surf. & Coat. Tech. Vol. 209(2012), p.212.

Google Scholar

[5] A. Ibrahim, R.S. Lima, C.C. Berndt and B.R. Marple: Surf. & Coat. Tech. Vol. 201(2007), p.7589.

Google Scholar

[6] X. Nie, A. Leyland and A. Matthews: Surf. & Coat. Tech. Vol. 125(2000), p.407.

Google Scholar

[7] H. Çelikkan, M.K. Öztürk, H. Aydin and M.L. Aksu.: Thin Solid Films, Vol. 515(2007), p.5348.

DOI: 10.1016/j.tsf.2007.01.020

Google Scholar

[8] E. Atar, E. Sabri Kayali and H. Cimenoglu: Surf. & Coat. Tech. Vol. 202(2008), p.4583.

Google Scholar

[9] X.H. Yi, Z.G. Fan, J.L. Zhang and F.H. Li: Rare Metal Mater. & Eng. Vol. 39(2010), p.1631 (In Chinese).

Google Scholar

[10] T. Ahmed and H.J. Rack: Mater. Sci. & Eng. Vol. A243(1998), p.206.

Google Scholar

[11] H.R. Guo, B. Xu and N.N. Zhang: Mater. & Heat Treat. Vol. 37(2008). p.82(In Chinese).

Google Scholar

[12] X.M. Cao, M. Wen and W.X. Han: J. Chinese Rare Earth Soc. Vol. 15(1997), p.350(In Chinese).

Google Scholar

[13] X.H. Yi, Z.G. Fan, J.L. Zhang and F.H. Li: J. Chinese Rare Earth Soc. Vol. 28(2010), p.607(In Chinese).

Google Scholar

[14] K. Shigeaki and Y. Takao: Mater. Sci. & Eng. Vol. A338(2002), p.44.

Google Scholar