Effect of Cu (II) Ion on Abrasive-Free Polishing of Hard Disk Substrate with Peroxyacetic Acid System Slurry

Zhi Jun Wang; Hong Lei

doi:10.4028/www.scientific.net/AMR.753-755.333

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 753-755Effect of Cu (II) Ion on Abrasive-Free Polishing...

Effect of Cu (II) Ion on Abrasive-Free Polishing of Hard Disk Substrate with Peroxyacetic Acid System Slurry

Abstract:

Recently, abrasive-free polishing (AFP) has attracted a great deal of attention due to its gentler polishing process and lower particle residue than traditional chemical mechanical polishing (CMP). Our present work investigates the effectiveness of Cu (II) ion on AFP of hard disk substrate in peroxyacetic acid (PAA) system slurry. The polishing experimental results show that the PAA/Cu (II) system slurry has higher material removal rate (MRR) and lower roughness (Ra) than PAA system. Further, the reaction mechanism of Cu (II) ion in PAA/Cu (II) system AFP of hard disk substrate was investigated preliminarily by electrochemical analysis.

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Periodical:

Advanced Materials Research (Volumes 753-755)

Pages:

333-336

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.753-755.333

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Online since:

August 2013

Authors:

Zhi Jun Wang, Hong Lei

Keywords:

Abrasive-Free Polishing (AFP), Cu (II) Ion, Peroxyacetic Acid

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