A Novel Temperature Compensated Amplifier

Cheng Peng Liu; Jian Gang  Shi; Guo Qiang  Wang; Zheng Rong  He

doi:10.4028/www.scientific.net/AMR.756-759.781

Paper Titles

Predistortion Technology Used for TWTA
p.760

Process Planning and Simulation Validate of Welding Line for BIW Based on DELMIA
p.764

Modeling and Simulation of Voltage Frequency Ratio Control System for Asynchronous Motor
p.768

Recursive Backstepping Nonlinear Control and Sliding Mode Control of a Novel Hyperchaotic Finance System
p.775

A Novel Temperature Compensated Amplifier
p.781

Research on the Association Relationship of Information Industry Based on Structural Decomposition Analysis
p.787

The Research and Application of Network Security Technology in the University Network
p.791

The Research of CAS in the Enterprise Information Resource Integration
p.796

Study on Resource Construction and Management of Multimedia Network Teaching
p.800

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 756-759A Novel Temperature Compensated Amplifier

A Novel Temperature Compensated Amplifier

Abstract:

A novel configuration for a novel temperature compensated amplifier is presented in this paper. This amplifier exhibits high performance including Return Loss is well blew-12dB from DC to 6GHz, At 3.1GHz, the typical gain is 14.1dB, noise figure is 3.0dB, 1dB compression point is 13.9dBm.with insensitivity to temperature.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 756-759)

Pages:

781-784

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.756-759.781

Citation:

Cite this paper

Online since:

September 2013

Authors:

Cheng Peng Liu, Jian Gang Shi, Guo Qiang Wang, Zheng Rong He

Keywords:

Amplifier, Darlington, Self-Bias, Temperature Compensated

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C.T. Armijo R.G. Meyer, A new wide-band Darlington amplifier, Solid-State Circuits, IEEE Journal of vol. 24, Issue 4, pp.1105-1109, Aug (1989).

DOI: 10.1109/4.34098

Google Scholar

[2] J. Sadowy etal., Low noise, high linearity, wide bandwidth amplifier using a 0. 35um SiGe BiCMOS for WLAN applications, in Proc. Radio Frequency Integrated Circuits (RFIC) symp., pp.217-220, Jun (2002).

DOI: 10.1109/rfic.2002.1012035

Google Scholar

[3] MarkRodwell, JensenJF, StanchinaWE, etal. 33GHz Monolithic Cascode AlInAs/GaInAs Heterojunction Bipolar Transistor Feedback Amplifier[J]. Journal of Solid-State Circuits, 1991, 26(10): 1378-1382.

DOI: 10.1109/4.90089

Google Scholar

[4] Mohd Fairuz Zakaria, Burhanuddin Yeop Majlis. 1-3GHz MMIC Amplifier Design for Transmit/ Receive Applications[ C ]/ /Proceedings of IEEE International Conference on Semiconductor Electronics. Malaysia: IEEE, 2000: 113-115.

DOI: 10.1109/smelec.2000.932445

Google Scholar

[5] SHEN Pei. An Ultra-Wideband Darlington Low Noise Amplifier Design Based on SiGe HBT,. Proceedings of ICMMT2008, 2008: pp.1372-1375.

Google Scholar

[6] Joho J. Nisbet, CA, U.S. Patent 6, 665, 353 . (2003).

Google Scholar

[7] Kevin W. Kobayshi, CA, U.S. Patent 6, 727, 762 . (2004).

Google Scholar

[8] Kevin W. Kobayshi, CA ,U.S. Patent 6, 972, 630. (2005).

Google Scholar

[9] LI Xiao qian. High Linearity-wideband PHEMT Darlington Amplifier,. RESEARCH & PROGRESS OF SSE, jun,. 2010 : pp.218-221.

Google Scholar

[10] DING Hua-feng. A 0. 1～4 GHz Darlington Cascode Broadband Gain Block,. Telecommunication Engineering, Nov. 2010: pp.80-84.

Google Scholar