Fabrication and Electroluminescence of N-ZnO Nanorods/p-Si Nanowires Heterostructured Light-Emitting Diodes

Abstract:

The n-ZnO nanorods/p-Si nanowires heterojunction was fabricated by chemical method. The microstructure of the epitaxially grown ZnO nanorod was characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The photoluminescence of the nanostructure showed a typical UV emission band and a defect-related emission band. Further, the electroluminescence of the nanostructure were measured, and the mechanism was discussed based on the band diagram of the n-ZnO nanorods/p-Si nanowires heterojunction.

• Periodical: Advanced Materials Research (Volume 771)
• Pages: 135-138
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.771.135
• Online since: September 2013
• Authors: Jun Dai, Yi Jie Fan
• Keywords: Light Emitting Diode (LED), Nanostructure, Zinc Oxide (ZnO)

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