Structural Shifting and Electronic Properties of Stone-Wales Defect in Armchair Edge (5,5) Carbon Nanotube

Article Preview

Abstract:

Stone Wales (SW) defect is one type of topological defect on the CNT, in this study we performed first principles calculations of SW defects in armchair edge (5,5) carbon nanotube (CNT) by the density functional theory (DFT). Two different defects were studied such as longitudinal and circumference types. Our calculation results show that a longitudinal SW defect is more stable than circumference SW defect. However barrier energy as parameter to control the SW defect in CNT was studied, in calculation we applied Nudge Elastic Band (NEB) method to find minimum energy path (MEP) and barrier energy for SW defect transitions. The result shows that barrier energy of circumference SW defect is lower than another one. We also found that in the case of circumference SW defect, armchair edge (5,5) CNT become semiconductor with the band gap of 0.0544 eV.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

380-385

Citation:

Online since:

September 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] S. Iijima: Nature Vol. 354 (1991), p.56.

Google Scholar

[2] J. C. Charlier: Acc. Chem. Res. Vol. 35 No. 12 (2002), p.1063.

Google Scholar

[3] K. Suenaga, H. Wakabayashi, M. Koshino, Y. Sato, K. Urita, and S. Iijima: Nature Nanotechnology Vol. 2 (2007), p.358.

DOI: 10.1038/nnano.2007.141

Google Scholar

[4] P. Partovi-Azar and A. Namiranian: J. Phys.: Condens. Matter Vol. 24 (2012) 035301.

Google Scholar

[5] L. Li, S. Reich, and J. Robertson: Phys. Rev. B Vol. 72 (2005) 184109.

Google Scholar

[6] G. Henkelman, G. Johannesson, and H. Jónsson, in: Theoretical Methods in Condensed Phase Chemistry, edited by S.D. Schwartz, volume 5 of Progress in Theoretical Chemistry and Physics, chapter, 10, Kluwer Academic Publishers (2000).

Google Scholar

[7] G. Henkelman, B. P. Uberuaga, and H. Jónsson: J. Chem. Phys. Vol. 113 No. 22 (2000), 9901.

Google Scholar

[8] Information on http: /www. ciis. iis. u-tokyo. ac. jp.

Google Scholar

[9] J. Ma, D. Alf, A. Michaelides, and E. Wang: Phys. Rev. B Vol. 80 (2009), 033407.

Google Scholar

[10] A. Setiadi, F. Muttaqien, M. S. Alam, and M. Saito: Submitted to Appl. Phys. Express (2012).

Google Scholar

[11] M. Berthe, S. Yoshida, Y. Ebine, K. Kanazawa, A. Okada, A. Taninaka, O. Takeuchi, N. Fukui, H. Shinohara, S. Suzuki, K. Sumitomo, Y. Kobayashi, B. Grandidier, D. Stiévenard, and H. Shigekawa: Nano Lett. Vol. 7 No 2 (2007), p.3623.

DOI: 10.1021/nl071845c

Google Scholar