Research on Ingot Casting Process and Properties of Poly-Silicon

Bai Tong Zhao; Wen Xiu Gao; Cheng Chang Jia

doi:10.4028/www.scientific.net/AMR.772.739

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 772Research on Ingot Casting Process and Properties...

Research on Ingot Casting Process and Properties of Poly-Silicon

Abstract:

Temperature gradient and solidification rate are two key parameters during polysilicon directional solidification, which are varied to improve the polysilicon production process. Dendritic growth, distribution of impurities, Minority carrier lifetime and resistivity mapping are also discussed in this paper. A better quality of polysilicon ingot is presented by optimized casting process.

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Periodical:

Advanced Materials Research (Volume 772)

Pages:

739-743

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.772.739

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Online since:

September 2013

Authors:

Bai Tong Zhao, Wen Xiu Gao, Cheng Chang Jia

Keywords:

Crystal, Directional Solidification, Minority Carrier Lifetime, Poly-Silicon, Resistivity

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