Sn Whisker Growth in Cu(Top)-Sn(Bottom) Bilayer System upon Room Temperature Aging

Lin Huang; Xue Nian Lin; Ren Wu Chen; Jiang Yong Wang

doi:10.4028/www.scientific.net/AMR.785-786.918

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 785-786Sn Whisker Growth in Cu(Top)-Sn(Bottom) Bilayer...

Sn Whisker Growth in Cu(Top)-Sn(Bottom) Bilayer System upon Room Temperature Aging

Abstract:

The Sn whisker growth in Cu(top)-Sn(bottom) bilayer system upon room temperature aging was investigated by scanning electron microscope and X-ray diffraction techniques. The experimental observations indicate that the Sn whisker growth on the Cu surface in Cu-Sn bilayer system is different from that on the Sn surface in Sn-Cu bilayer system. When the Sn sublayer thickness is less than 0.5μm, the Sn whisker growth can take place in Cu-Sn system but not in Sn-Cu system. An explanation for Sn whisker growth in Cu-Sn bilayer system is given.

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Periodical:

Advanced Materials Research (Volumes 785-786)

Pages:

918-923

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.785-786.918

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Online since:

September 2013

Authors:

Lin Huang*, Xue Nian Lin, Ren Wu Chen, Jiang Yong Wang

Keywords:

Cu-Sn Bilayer Film, Growth Mechanism, Intermetallic Compound, Sn Whisker

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References

[1] D.W. Romm, D.C. Abbott, S. Grenney and M. Khan: Application Report SZZA037A, (2003), p.1.

Google Scholar

[2] R.F. Champaign and R.R. Ogden: J Fail. Anal. And Preven. Vol. 10 (2010), p.444.

Google Scholar

[3] M. Sobiech, J. Teufel, U. Welzel, E.J. Mittemeijer and W. Hügel: Journal of electronic materials Vol. 40 (2011), p.2300.

Google Scholar

[4] M. Dittes, P. Oberndorff and L. Petit: Tin whisker formation – results, test methods and countermeasures, Proceedings of the 53rd Electronic Components and technology conference, (2003), p.822.

DOI: 10.1109/ectc.2003.1216384

Google Scholar

[5] M. Sobiech, U. Welzel, E.J. Mittemeijer, W. Hügel and A. Seekamp: J. Appl. Phys. Vol. 93 (2008), p. (1906).

Google Scholar

[6] M. Sobiech, C. Krüger, U. Welzel, J.Y. Wang, E.J. Mittemeijer and W. Hügel: J. Mater. Res. Vol. 26 (2011), p.1482.

Google Scholar

[7] G.T.T. Sheng, C.F. Hu, W.J. Choi, K.N. Tu, Y.Y. Bong and L. Nguyen: J. Appl. Phys. Vol. 92 (2002), p.64.

Google Scholar

[8] J. Cheng, P.T. Vianco, B. Zhang and J.C.M. Li: J. Appl. Phys. Vol. 98 (2011), p. (1910).

Google Scholar

[9] L. Reinbold, N. Jadhav, E. Chason and K.S. Kumar: J. Mater. Res. Vol. 24 (2009), p.3583.

Google Scholar

[10] J.A. Brusse, G.J. Ewell and J.P. Siplon: Tin whsikers: attributes and mitigation, 22nd Capacitor and Resistor Technology Symposium, (2002), p.67.

Google Scholar

[11] V.K. Glazunova and N.T. Kudryavtsev: Zh. Prikl. Khim. Vol. 36 (1963), p.543.

Google Scholar