Structure of Ni₈₀Fe₂₀ Films Deposited on SiO₂/Si(100) by Direct Current Magnetron Sputtering System with the Oblique Target

Abstract:

About 300nm-thick Ni₈₀Fe₂₀ films were deposited on SiO₂/Si (100) substrates at 300 K and 673 K in 1.2 Pa and 0.8 Pa Ar gas by a direct current (DC) magnetron sputtering system with the oblique target. The films grown at 300 K have a predominate [11 crystal orientation in the growth direction whereas those deposited at 673 K grow mainly with a [11 crystalline orientation in the growth direction. All the films have a columnar structure. The grain size increases with increasing deposition temperature. The films grown at 673 K are dense compared with those grown at 300 K. The film deposited at 673 K in 0.8 Pa Ar has the lowest resistivity.

• Periodical: Advanced Materials Research (Volume 787)
• Pages: 14-18
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.787.14
• Online since: September 2013
• Authors: Xiao Bai Chen, Hong Qiu
• Keywords: Crystalline Orientation, Ni₈₀Fe₂₀ Film, Resistivity, Sputtering, Structure

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