Synthesis and Resistive Switching Characteristics of Ethyl Methacrylate /N, N'-4, 4'-Diphenylmethane-Bismaleimide Copolymer

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The Ethyl Methacrylate (EMA)/N, N-4, 4-Diphenylmethane-bismaleimide (BMI) copolymer was synthesized by the conventional free radical polymerization. The resulting copolymer was fully characterized by FTIR, TG, DSC and the film exhibited excellent film-forming property, high thermal and dimensional stability. The devices based on EMA/ BMI copolymer possess a sandwich structure comprising bottom indiumtin oxide (ITO) electrode and top Ag electrode. The as-fabricated device exhibits the nonvolatile rewritable flash type memory characteristics. The ITO/(EMA/BMI copolymer)/Ag memory device also demonstrates ON/OFF-current ratio of about 1 × 102 and lower switching threshold voltage of about 0.98V.

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159-163

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September 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] Y. -S. Lai, C. -H. Tu, D. -L. Kwong, and J. S. Chen, Charge-transport characteristics in bistable resistive poly(N-vinylcarbazole) films, IEEE Electron Device Lett., vol. 27, no. 6, p.451–453, Jun. (2006).

DOI: 10.1109/led.2006.874762

Google Scholar

[2] J. Y. Ouyang, C. W. Chu, R. J. H. Tseng, A. Prakash, and Y. Yang, Organic memory device fabricated through solution processing, Proc. IEEE, vol. 93, no. 7, p.1287–1296, Jul. (2005).

DOI: 10.1109/jproc.2005.851235

Google Scholar

[3] H.I. Hanafi, S. Tiwari, I. Khan, Fast and long retention-time nano-crystal memory, IEEE Trans. Elect. Dev. 43 (1996) 553.

DOI: 10.1109/16.535349

Google Scholar

[4] J. Blauwe, Nanocrystal nonvolatile memory devices, IEEE Trans. Nanotechnol. 1 (2002) 2.

Google Scholar

[5] S.S. Kim, W.J. Cho, C.G. Ahn, K. Im, J.H. Yang, I.B. Baek, S. Lee, K.S. Lim, Fabrication of fin field-effect transistor silicon nanocrystal floating gate memory using photochemical vapor deposition, Appl. Phys. Lett. 88 (2006) 223502.

DOI: 10.1063/1.2208268

Google Scholar

[6] T.Z. Lu, M. Alexe, R. Scholz, V. Talelaev, M. Zacharias, Multilevel charge storage in silicon nanocrystal multilayers, Appl. Phys. Lett. 87(2005) 202110.

DOI: 10.1063/1.2132083

Google Scholar

[7] Ling Q-D, Liaw D-J, Teo EY-H, Zhu C, Chan DS-H, Kang E-T, et al. Polymer 2007; 48(18): 5182-201.

Google Scholar

[8] Yueqin Li, Yueying Chu, Runchen Fang. Synthesis and memory characteristics of polyimides containing noncoplanararyl pendant groups. Polymer, 2012, 53: 229-240.

DOI: 10.1016/j.polymer.2011.11.044

Google Scholar

[9] Dong Wang, Hua Li, Najun Li, Ying Zhao. A new DRAM-type memory devices based on polymethacrylate containing pendant 2-methylbenzothiazole. Materials Chemistry and Physics, 2012, 134: 273-278.

DOI: 10.1016/j.matchemphys.2012.02.063

Google Scholar

[10] Lai QX, Zhu ZH, Chen Y, Patil S, Wudl F. Appl Phys Lett 2006; 88(13): 133515.

Google Scholar