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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 788Effects of Excess Bismuth Content on...

Effects of Excess Bismuth Content on Microstructure and Electric Properties of Europium-Substituted Bismuth Titanate Thin Films

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Abstract:

Bi_3.25Eu_0.75Ti₃O₁₂ (BET) thin films with various excess bismuth (Bi) contents (5, 10, 15, 20-mol%) were grown by a metal-organic decomposition method at 700 °C. Effects of excess Bi content on microstructure and electric properties of BET thin films were investigated. BET thin film with 10-mol% excess Bi content shows larger remnant polarization (66.3 C/cm²), better fatigue endurance (3% loss of 2P_r after 1.8×10¹⁰ switching cycles), and lower leakage current density (1×10^-7 A/cm²) than those of other prepared BET thin films. Additionally, the mechanisms concerning the dependence of the properties on excess Bi content of BET thin films were discussed.

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Advanced Research on Material Engineering, Chemistry and Environment

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Periodical:

Advanced Materials Research (Volume 788)

Pages:

89-94

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.788.89

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Online since:

September 2013

Authors:

Lin He, Geng Zhang

Keywords:

BET Thin Film, Electric Property, Fatigue, Leakage Current, Polarization

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] W.J. Leng, C.R. Yang, J.H. Zhang, H.W. Chen, J. Appl. Phys. 99 (2006) 114904.

[2] H.N. Lee, D. Hesse, N. Zakharov, U. Gösele, Science 296 (2002) (2006).

[3] Y. Wei, H. B. Cheng, X. Y. Wang, and X. J. Zheng, Appl. Phys. Lett. 101 (2012) 231909.

[4] A.Z. Simoes, A. Ries, B.D. Stojanovic, G. Biasotto, Ceramics International 33 (2007) 1535.

[5] Z. Zhu, X. J. Zheng, Z. C. Yang, and S. S. Qu, J. Appl. Phys. 113 (2013) 044110.

[6] M.C. Kao, H.Z. Chen, S.L. Young, Thin Solid Films 528 (2013) 143.

[7] Y.C. Chang, D.H. Kuo, Thin Solid Films 515 (2006) 1683.

[8] S.J. Luo, C.B. Wang, S. Zhang, R. Tu , Q. Shen, F. Chen, Materials Letters 79 (2012) 173.

[9] K.T. Kim, C.I. Kim, D.H. Kang, I.W. Shim, Thin Solid Films 422 (2002) 230.

[11] X.J. Zheng, L. He, M.H. Tang, Y. Ma, J. B. Wang, Q. M. Wang, Mater. Lett. 62 (2008) 2876.

[10] X.J. Zheng, L. He, Y.C. Zhou, M.H. Tang, Appl. Phys. Lett. 89 (2006) 252908.

[12] X.L. Zhong, J.B. Wang, S.X. Yang, Applied Surface Science 253, (2006) 417.

[13] Y.N. Oh, S.G. Yoon, Applied Surface Science 227 (2004) 187.

[14] K. Aizawa, E. Tokumitsu, K. Okamoto, Appl. Phys. Lett. 76 (2000) 2609.

[15] Y.C. Chen, C.P. Hsiung, C.Y. Chen, J.Y. Gan, Thin Solid Films 513 (2006) 331.

[16] L.A. Knauss, J.M. Pond, J.S. Horwitz, Appl. Phys. Lett. 69 (1996) 25.

[17] N. Menou, A.M. Castagnos, C. Muller, D. Goguenheim, J. Appl. Phys., 97(2005) 044106.

[18] S.K. Singh, H. Ishiwara, Solid State Communications 140 (2006) 430.

[19] K.T. Kim, C.I. Kim, Microelectronic Engineering 71 (2004) 266.

[20] X.S. Gao, J.M. Xue, J. Wang, J. Appl. Phys. 97 (2005) 034101.