Thermoelectric Properties of Y-Doped Mg2Si Prepared by Field-Activated and Pressure-Assisted Reactive Sintering
Reactive sintering of elemental powders was used to form Y-doped Mg2Si (Y: 1000, 2000, 3000ppm) using a field-activated pressure assisted synthesis (FAPAS) method. XRD analysis, and the calculation of lattice constant (a) indicates that 1000ppm is the solid solubility of Y in Mg2Si. Sample doped with 2000ppm Y owns better performances, the absolute value of Seebeck Coefficient increases in the temperature of 288-580K and is higher than that of non-doped Mg2Si, and it got higher electric conductivity and higher power factor, which reaches up to 1.67 times of non-doped Mg2Si at 438K and 2.03 times of that of non-doped Mg2Si at about 408K. Meanwhile, the introduction of Y can decrease thermo-conductivity obviously, proving that the introduction of Y is favorable for both electrical and thermal properties.
Yansheng Yin and Xin Wang
Q. S. Meng et al., "Thermoelectric Properties of Y-Doped Mg2Si Prepared by Field-Activated and Pressure-Assisted Reactive Sintering", Advanced Materials Research, Vols. 79-82, pp. 1639-1642, 2009