Thermoelectric Properties of Y-Doped Mg2Si Prepared by Field-Activated and Pressure-Assisted Reactive Sintering

Qing Sen Meng; L.Q. Wang; B.S. Li; L.Z. Ding; Shao Ping Chen

doi:10.4028/www.scientific.net/AMR.79-82.1639

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 79-82Thermoelectric Properties of Y-Doped Mg2Si...

Thermoelectric Properties of Y-Doped Mg₂Si Prepared by Field-Activated and Pressure-Assisted Reactive Sintering

Abstract:

Reactive sintering of elemental powders was used to form Y-doped Mg2Si (Y: 1000, 2000, 3000ppm) using a field-activated pressure assisted synthesis (FAPAS) method. XRD analysis, and the calculation of lattice constant (a) indicates that 1000ppm is the solid solubility of Y in Mg2Si. Sample doped with 2000ppm Y owns better performances, the absolute value of Seebeck Coefficient increases in the temperature of 288-580K and is higher than that of non-doped Mg2Si, and it got higher electric conductivity and higher power factor, which reaches up to 1.67 times of non-doped Mg2Si at 438K and 2.03 times of that of non-doped Mg2Si at about 408K. Meanwhile, the introduction of Y can decrease thermo-conductivity obviously, proving that the introduction of Y is favorable for both electrical and thermal properties.

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Periodical:

Advanced Materials Research (Volumes 79-82)

Pages:

1639-1642

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.79-82.1639

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Online since:

August 2009

Authors:

Qing Sen Meng, L.Q. Wang, B.S. Li, L.Z. Ding, Shao Ping Chen

Keywords:

Field-Assisted, Mg₂Si, Reactive Sintering, Thermoelectric Material, Y

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