Microstructure and Electrical Properties of La2O3-Doped ZnO-Bi2O3 Based Varistor Ceramics
La2O3-doped ZnO-Bi2O3-based varistor ceramics were obtained by a solid reaction route, and the microstructure and electrical properties of the varistor ceramics were studied in this paper. The results showed with addition of 0-1.00mol% La2O3, La2O3-doped ZnO-based varistor ceramics were prepared in this paper with the voltage gradient of 77-503V/mm, the nonlinear coefficient of 2.4-36.8, and the leakage current of 0.09-494μA. The results also showed with addition of 0.08mol% La2O3, La2O3-doped ZnO-based varistor ceramics exhibit comparatively ideal comprehensive electrical properties. Such as the threshold voltage was 320V/mm, the nonlinear coefficient was 36.8 and the leakage current was 0.29μA. The doping of La2O3 affects the form and decomposition of the pyrochlore.
Yansheng Yin and Xin Wang
D. Xu et al., "Microstructure and Electrical Properties of La2O3-Doped ZnO-Bi2O3 Based Varistor Ceramics", Advanced Materials Research, Vols. 79-82, pp. 2007-2010, 2009