Microstructure and Electrical Properties of La2O3-Doped ZnO-Bi2O3 Based Varistor Ceramics

Abstract:

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La2O3-doped ZnO-Bi2O3-based varistor ceramics were obtained by a solid reaction route, and the microstructure and electrical properties of the varistor ceramics were studied in this paper. The results showed with addition of 0-1.00mol% La2O3, La2O3-doped ZnO-based varistor ceramics were prepared in this paper with the voltage gradient of 77-503V/mm, the nonlinear coefficient of 2.4-36.8, and the leakage current of 0.09-494μA. The results also showed with addition of 0.08mol% La2O3, La2O3-doped ZnO-based varistor ceramics exhibit comparatively ideal comprehensive electrical properties. Such as the threshold voltage was 320V/mm, the nonlinear coefficient was 36.8 and the leakage current was 0.29μA. The doping of La2O3 affects the form and decomposition of the pyrochlore.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

2007-2010

DOI:

10.4028/www.scientific.net/AMR.79-82.2007

Citation:

D. Xu et al., "Microstructure and Electrical Properties of La2O3-Doped ZnO-Bi2O3 Based Varistor Ceramics", Advanced Materials Research, Vols. 79-82, pp. 2007-2010, 2009

Online since:

August 2009

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$35.00

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