Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films

Abstract:

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Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasing sputtering input power, the content of Co in the film increased. At input power of 14 W, film contained -(Fe,Co)8N phase was produced which exhibited higher saturation magnetization (252.85 Am2/kg) and lower value of coercivity (3.66 kAm-1), corresponded to the 12% content of Co in the film.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

635-638

DOI:

10.4028/www.scientific.net/AMR.79-82.635

Citation:

X. Wang et al., "Effect of Sputtering Input Power of Co on Structure and Magnetic Properties of Fe-Co-N Thin Films", Advanced Materials Research, Vols. 79-82, pp. 635-638, 2009

Online since:

August 2009

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$35.00

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