Friction Force Analysis on Diaomond Lapping of Sapphire Wafers

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This paper is to design and developing a friction sensor system (FSS) for prediction of endpoint detection (EPD) on diamond lapping of sapphire or mono-crystalline aluminum oxide wafers. The endpoint detection usually includes start region, lapping region, transient region and endpoint region to control the planarization procedure by diamond lapping with variant plate of copper, resin copper, or tin materials. Experiments have been performed with 9 tests composed by three kinds of viscosity of slurry lapping with three kinds of lap plates. The coefficient of friction (CoF) has been obtained by the designed FSS and then compared with different test parameters. The as-lapped sapphire wafers have also measured by coherence surface interferometer, CCI-Lite (Taylor Hobson, UK). Experimental results show that the hardness of plate and viscosity of slurry are critical factors for as-lapped wafer quality. The EPD of diamond lapping with resin copper plate can be determined by the CoF data and that can be used for justifying the appropriate lapping time of sapphire wafers. Future study can focus on the relationship of sub-surface crack caused by the diamond lapping process.

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461-468

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September 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] F. W. Preston, The theory and design of plate glass polishing machine, Journal of the society of glass technology, vol. 11, 214, (1927).

Google Scholar

[2] M. Buijs et al., Three-body abrasion of brittle materials as studied by lapping, Philips Research Laboratories, vol. 166, pp.237-245, (1993).

DOI: 10.1016/0043-1648(93)90267-p

Google Scholar

[3] Y. P. Chang et al., An Investigation of Material Removal Mechanisms in Lapping with Grain Size Transition, ASME, vol. 122, pp.413-419, (2000).

DOI: 10.1115/1.1286471

Google Scholar

[4] U. Heisel et al., Process Analysis for the Evaluation of the Surface Formation and Removal Rate in Lapping, CIRP Annals - Manufacturing Technology , pp.229-232, (2001).

DOI: 10.1016/s0007-8506(07)62111-8

Google Scholar

[5] Shengyi Li et al., Relationship between subsurface damage and surface roughness of optical materials in grinding and lapping processes, Journal of Materials Processing technology, vol. 205, pp.34-41, (2008).

DOI: 10.1016/j.jmatprotec.2007.11.118

Google Scholar

[6] L.S. Deshpande et al., Observations in the flat lapping of stainless steel and bronze, Wear, p.105–116, (2008).

DOI: 10.1016/j.wear.2007.09.004

Google Scholar

[7] F. Elfallagh et al., 3D analysis of crack morphologies in silicate glass using FIB tomography, Journal of European Ceramic Society, vol. 29, pp.47-52, (2009).

DOI: 10.1016/j.jeurceramsoc.2008.05.042

Google Scholar

[8] Nabil Belkhir et al., Surface behavior during abrasive grain action in the glass lapping process, Applied Surface Science, p.7951–7958, (2009).

DOI: 10.1016/j.apsusc.2009.04.178

Google Scholar

[9] Donghui Wen et al., Experimental investigation on the effect of abrasive grain size on the lapping uniformity of sapphire wafer, SPIE, Vol. 7282, (2009).

Google Scholar

[10] Sumeet Bhagavat et al., Effects of mixed abrasive grits in slurries on free abrasive machining (FAM) processes, International Journal of Machine Tools & Manufacture, p.843–847, (2010).

DOI: 10.1016/j.ijmachtools.2010.04.006

Google Scholar

[11] Yohei Yamada et al., Frictional Characterization of Chemical Mechanical Polishing Pad Surface and Diamond Conditioner Wear, Japanese Journal of Applied Physics, Vol. 47, p.6282–6287, (2008).

DOI: 10.1143/jjap.47.6282

Google Scholar

[12] Hyunseop Lee et al., Mechanical effect of colloidal silica in copper chemical mechanical planarization, Journal of Materials Processing Technology, p.6134–6139, (2009).

DOI: 10.1016/j.jmatprotec.2009.05.027

Google Scholar

[13] Zefang Zhang et al., Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing, Microelectronic Engineering, (2011).

DOI: 10.1016/j.mee.2011.04.068

Google Scholar

[14] Yinzhen Wang et al., Effects of sapphire substrates surface treatment on the ZnO thin films grown by magnetron sputtering, Physics B, vol. 403, p.1979–1982, (2008).

DOI: 10.1016/j.physb.2007.11.003

Google Scholar

[15] Y.H. Yu et al., Measurement of residual stress of PZT thin film on Si (1 0 0) by synchrotron X-ray rocking curve technique, Journal of Alloys and Compounds, vol. 449, p.56–59, (2008).

DOI: 10.1016/j.jallcom.2006.02.109

Google Scholar

[16] Kuei-Ming Chen et al., Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching, Journal of Crystal Growth , vol. 312, p.3574–3578, (2010).

DOI: 10.1016/j.jcrysgro.2010.09.044

Google Scholar

[17] Q. Zheng et al., Influence of surface preparation on CdZnTe nuclear radiation detectors, Applied Surface Science, vol. 257, p.8742–8746, (2011).

DOI: 10.1016/j.apsusc.2011.05.098

Google Scholar