2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

Da Qing Peng; Xun Dong; Zhong Hui Li; Dong Guo Zhang; Liang Li; Jin Yu Ni; Wei Ke Luo

doi:10.4028/www.scientific.net/AMR.805-806.1027

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 805-8062DEG Transport Properties in AlGaN/GaN Double...

2DEG Transport Properties in AlGaN/GaN Double Heterostructure HEMT with High In Composition InGaN Channel

Abstract:

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm²/V·s with low sheet resistance of 342Ω/ was obtained with In composition 0.19.

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Advanced Materials Research (Volumes 805-806)

Pages:

1027-1030

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.805-806.1027

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Online since:

September 2013

Authors:

Da Qing Peng, Xun Dong, Zhong Hui Li, Dong Guo Zhang, Liang Li, Jin Yu Ni, Wei Ke Luo

Keywords:

2DEG, AlGaN/GaN Heterostructure, HEMT, InGaN Channel

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