Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

Zhong Hui Li; Da Qing Peng; Dong Guo Zhang; Liang Li; Jin Yu Ni; Xun Dong; Wei Ke Luo

doi:10.4028/www.scientific.net/AMR.805-806.1035

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Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 805-806Properties of N-Polar GaN Films Grown by MOCVD on...

Properties of N-Polar GaN Films Grown by MOCVD on C-Face 6H-SiC Substrate

Abstract:

High quality N-polar GaN films were grown by MOCVD on C-face 6H-SiC substrate etched by KOH eutectics at 300°C for 5min. A 50 nm high-temperature AlN buffer layer was used to release the lattice mismatch stress between GaN and SiC substrate. The N-polar GaN films grow on the C-face 6H-SiC substrate etched by KOH eutectics have a high crystalline quality and smooth surface. The full-width-at-half-maximum (FWHM) of (002) and (102) XRD spectra were 347.4 and 501.5 arcsec., respectively. The root-mean-square (RMS) of 3μm×3μm is 0.666 nm. The luminescence property of the N-polar GaN films was studied. The band-edge emission of photoluminescence spectra was at 364.6 nm with weak yellow luminescence near 560 nm. The stress in the films was also calculated from Raman spectra. The results indicated a tensile stress in the N-polar GaN films, which is mainly caused by mismatch of thermal expansion coefficient between GaN and SiC substrate.