The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

Kun Liu; Ji Sheng Yang; Rui Li; Wei Peng; Shi Pan

doi:10.4028/www.scientific.net/AMR.818.88

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The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 818The Structural Characteristics of CIS Thin Films...

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

Abstract:

The properties of the absorber layer of solar cell CuInSe₂(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A₁mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.