CuIn1-xGaxSe2 Thin Films Prepared by Co-Evaporation Technique

Ya Fen Wu; Jiunn Chyi Lee

doi:10.4028/www.scientific.net/AMR.827.12

Paper Titles

Preface and Organizing Committee

The Study on the Influential Factors of Photocatalytic Performance of Eosin-Sensitized TiO₂ Nanoparticles
p.3

Molecular Dynamics Simulation of TRIP Steel Residual Austenite Stacking Fault Development
p.8

CuIn_1-xGa_xSe₂ Thin Films Prepared by Co-Evaporation Technique
p.12

Synthesis and Electrochemical Properties of LiFe (PO₄)_(1-x/3)F_x/C as a Cathode Material
p.16

Higher Alcohols Synthesis from CO₂ Hydrogenation over K₂O-Modified CuZnFeZrO₂ Catalysts
p.20

Overview of Bio-Oil Upgrading via Catalytic Cracking
p.25

Electrochemical Degradation Pathway of Tricyclazole in Aqueous Solution Using Lead Dioxide Anode
p.30

Synthesis of Titanium Dioxide in Hydrogen Peroxide Solution and its Photocatalytic Character
p.34

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 827CuIn1-xGaxSe2 Thin Films Prepared by...

CuIn_1-xGa_xSe₂ Thin Films Prepared by Co-Evaporation Technique

Abstract:

The optical properties of Cu-poor CuIn_1-xGa_xSe₂ thin films with different gallium contents grown by co-evaporated technique were studied. Measurements of photoluminescence and photoreflectance were performed on the samples. The photoluminescence and photoreflectance emission peaks observed around 1.1 eV are attributed to donor-acceptor pair luminescence. These donor-acceptor pair emissions are considered to originate from relatively shallow acceptor and donor energy levels. With increasing gallium content, the emission peaks shift towards higher levels of photon energy, and the linewidths of the luminescence spectra for the samples become wider, which we attributes to the greater statistical disorder between indium and gallium. Moreover, the conversion efficiency of the CuIn_1-xGa_xSe₂-based solar cells is obtained. The measured results coincide with the inference given by the photoluminescence spectra.

You might also be interested in these eBooks

Solar Energy Materials and Energy Engineering

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 827)

Pages:

12-15

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.827.12

Citation:

Cite this paper

Online since:

October 2013

Authors:

Ya Fen Wu, Jiunn Chyi Lee

Keywords:

CIGS Thin Films, Conversion Efficiency, Photoluminescence (PL), Photoreflectance

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] I. Repins, M.A. Contreras, B. Egaas, C. DeHart, J. Scharf, C.L. Perkins, B. To, R. Noufi: Prog. Photovoltaics Vol. 16 (2008), p.235.

Google Scholar

[2] A. Goetzberger, C. Hebling, H.W. Schock: Mater. Sci. Engin. R. Vol. 40 (2003), p.1.

Google Scholar

[3] A. Boslo, N. Romeo, A. Podesta, S. Mazzamuto, V. Canevari: Cryst. Res. Technol. Vol. 40 (2005), p.1048.

Google Scholar

[4] F.A. Abou-Elfotouh, H. Moutinho, A. Bakry, T.J. Coutts, L.L. Kazmerski: Solar Cells Vol. 30 (1991), p.151.

DOI: 10.1016/0379-6787(91)90048-t

Google Scholar

[5] S. Shirakata, K. Ohkubo, Y. Ishii, T. Nakada: Sol. Energy Mater. Sol. Cells Vol. 93 (2009), p.988.

Google Scholar

[6] N. Rega, S. Siebentritt, J. Albert, S. Nishiwaki, A. Zajogin, M.C. Lux-Steiner, R. Kniese, M.J. Romero: Thin Solid Films Vol. 480-481 (2005), p.286.

DOI: 10.1016/j.tsf.2004.11.079

Google Scholar