Study of Dielectric and Electrical Properties of Nanostructured ZnO/MgO Films via Chemical Bath Deposition Techniques

Habibah Zulkefle; Mohammad Syafiq Rashidi; Firdaus Che Mat; Lyly Nyl Ismail; Raudah Abu Bakar; Mohamad Rusop

doi:10.4028/www.scientific.net/AMR.832.522

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 832Study of Dielectric and Electrical Properties of...

Study of Dielectric and Electrical Properties of Nanostructured ZnO/MgO Films via Chemical Bath Deposition Techniques

Abstract:

This research work focuses on the synthesis and deposition of nanostructured ZnO/MgO using immersion method where the influence of deposition time had been investigated. The deposition time was varied by controlling the immersion time at 2, 4, 6 and 8 hrs respectively. Electrical properties obtained revealed that the resistivity values varied from 12.5 to 20.0 kΩ.cm which due to the changes in carrier mobility and scattering. It being found that, the leakage current behaviour shows good in dielectric properties where the J values obtained was below than 1E^-8 A.cm^-2. Some surface modification observed as the immersion time increased from 2 to 8 hrs which also reflects to the variation in resistivity, leakage current and k values obtained. The formation of flakes like structure was observed for films with 4 hrs immersion time which resulted in the enhancement in k values at high frequency region.

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Periodical:

Advanced Materials Research (Volume 832)

Pages:

522-526

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.832.522

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Online since:

November 2013

Authors:

Habibah Zulkefle, Mohammad Syafiq Rashidi, Firdaus Che Mat, Lyly Nyl Ismail, Raudah Abu Bakar, Mohamad Rusop

Keywords:

Chemical Solution, Dielectric, MgO Films, Nanofiller, Relative Permittivity

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References

[1] C. E. Kim and I. Yun, Effects of the interfacial layer on electrical characteristics of Al2O3/TiO2/Al2O3 thin films for gate dielectrics, Appl. Surf. Sci. 258 (2012) 3089-3093.

DOI: 10.1016/j.apsusc.2011.11.043

Google Scholar

[2] F. M. Pontes, E. R. Leite, E. J. H. Lee, E. Longo, and J. A. Varela, Dielectric properties and microstructure of SrTiO3/BaTiO3 multilayer thin films prepared by a chemical route, Thin Solid Films 385 (2001) 260-265.

DOI: 10.1016/s0040-6090(01)00772-6

Google Scholar

[3] D. Peng and Z. Meng, Influence of buffer layer on dielectric properties of (Ba1-xSrx)TiO3 thin films, Microelectron. Eng. 66 (2003) 631-636.

DOI: 10.1016/s0167-9317(02)00975-9

Google Scholar

[4] S. W. Jeong, H. J. Lee, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, W. Xianyu, and J. Jung, Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors, Thin Solid Films 515 (2006) 526-530.

DOI: 10.1016/j.tsf.2005.12.288

Google Scholar

[5] A. Bajolet, J. P. Manceau, S. BruyÃ¨re, R. Clerc, M. Proust, N. Gaillard, J. C. Giraudin, P. Delpech, L. MontÃ¨s, and G. Ghibaudo, Impact of TiN post-treatment on metal insulator metal capacitor performances, Microelectron. Eng. 83 (2006) 2189-2194.

DOI: 10.1016/j.mee.2006.10.004

Google Scholar

[6] T.-M. P. Somnath Mondal, High-performance Ni/Lu2O3/TaN metal-insulator-metal capacitors, IEEE Device Letters. 32 (2011) 1576-1578.

DOI: 10.1109/led.2011.2163611

Google Scholar

[7] I.-S. H. Hyuk-Min Kwon, Sang-Uk Park, Jung-Deuk Bok, Yi-Jung Jung, Hong-Sik Shin, Chang-Yong Kang, Byoung-Hun Lee, Raj Jammy, Ga-Won Lee and Hi-Deok Lee, Conduction mechanism and reliability characteristics of a metal-insulator-metal capacitor with single ZrO2 layer, Jpn. J. Appl. Phys. 50 (2011).

DOI: 10.1109/led.2011.2114633

Google Scholar

[8] R. S. G. Nabiyouni, M. Toghiany, M. H. Majles Ara and K. Hedayati, Preparation and characterization of nanostructured ZnS thin films grown on glass and N-type Si substrates using a new chemical bath deposition technique, Rev. Advance Material Science, 27 (2011) 52-57.

Google Scholar

[9] D. S. Boyle, O. Robbe, D. P. Halliday, M. R. Heinrich, A. Bayer, P. O'Brien, D. J. Otway, and M. D. G. Potter, A novel method for the synthesis of the ternary thin film semiconductor cadmium zinc sulfide from acidic chemical baths, Journal of Materials Chemistry 10 (2000) 2439-2441.

DOI: 10.1039/b005544l

Google Scholar

[10] M. Soosen Samuel, J. Koshy, A. Chandran, and K. C. George, Dielectric behavior and transport properties of ZnO nanorods, Physica B: Condensed Matter 406 (2011) 3023-3029.

DOI: 10.1016/j.physb.2011.04.070

Google Scholar

[11] D. Q. Y. H. M. Zhou, Z. M. Lu, L. R. Xiao and J. Li, Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties, Thin Solid Films. 515 (2007) 6909-6914.

DOI: 10.1016/j.tsf.2007.01.041

Google Scholar

[12] T. F. T. Tagawa, K. Nakamura, Increase in resistivity of indium-tin-oxide films spin coated on titanium dioxide, International Meeting for Future of Electron Devices (2011).

DOI: 10.1109/imfedk.2011.5944870

Google Scholar