Wetting Behavior and Interfacial Characteristic of the Sn-3.5Ag Alloy on Ni Substrates

Abstract:

Wetting behavior and interfacial characteristic of the Sn-3.5Ag/Ni system are investigated by sessile drop method at the temperature range of 523~773K. The reactive wetting processes demonstrate that: contact angles between the solder and Ni substrate decrease as exponential decay and the equilibrium contact angles decrease monotonously with the temperature increasing. Triple-line mobility is enhanced as the temperature increases. Compositions of the Sn-3.5Ag/Ni interface are identified by EPMA and EDS analysis as Ni₃Sn₄ adjacent to the solder and Ni₃Sn adjacent to the Ni substrate, respectively. The formation of the interface IMC was known to greatly improve the reliability of the solder joints in integrated circuits.

• Periodical: Advanced Materials Research (Volumes 834-836)
• Pages: 335-339
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.834-836.335
• Online since: October 2013
• Authors: Li Kun Zang*, Hong Liang Yan, Zhang Fu Yuan, Li Ying Lu
• Keywords: Contact Angle, Metals, Scanning Electron Microscopy (SEM), Soldering, Wetting

References

[1] M. Abtew, G. Selvaduray, Mater. Sci. Eng., R, 27, (2000), 95.

[2] G. Kumar, K. Prabhu, Adv. Colloid Interface Sci. 133(2), (2007), 61.

[3] Z. Yuan, W. Huang, K. Mukai, Appl. Phys. A: Mater. Sci. Process. 78(4), (2004), 617.

[4] Z. Moser, W. Gasior, J. Pstrus, A. Debski, Int. J. Thermophys. 29(6), (2008), (1974).

[5] J. Wang, L. Zhang, H. Liu, L. Liu, Z. Jin, J. Alloys Compd. 455(1-2), (2008), 159.

[6] K. Nogita, T. Nishimura, Scr. Mater. 59, (2008), 191.

[7] W. Feng, C. Wang, M. Morinaga, J. Electron. Mater. 31(3), (2002), 185.

[8] M. Rizvi, Y. Chan, C. Bailey, H. Lu, M. Islam, B. Wu, J. Electron. Mater. 34(8), (2005), 1115.

[9] M. Cho, S. Kang, D. Shih, H. Lee, J. Electron. Mater. 36(11), (2007), 1501.

[10] C. H. Wang, H. T. Shen, Intermetallics. 1 (2009), 113.

[11] K. Kim, S. Huh, K. Suganuma, J. Alloys Compd. 352, (2003), 226.

[12] M. Kitajima, T. Shono, Microelectron. Reliab. 45, (2005), 1208.

[13] M. Arenas, V. Acoff, J. Electron. Mater. 33(12), (2004), 1452.

[14] J. Yoon, Y. Lee, D. Kim, H. Kang, S. Suh, C. Yang, C. Lee, J. Jung, C. Yoo, S. Jung, J Alloys Compd. 381(1-2), (2004), 151.

[15] K. Landry, N. Eustathopoulos, Acta Mater. 44(10), (1996), 3923.

[16] J. Lee, S. Chen, H. Chang, C. Chen, J. Electron. Mater. 32(3), (2003), 117.

[17] S. Amore, E. Ricci, G. Borzone, R. Novakovic, Mater. Sci. Eng., A, 495, (2008), 108.

[18] Z. Yuan, K. Mukai, K. Takagi, M. Ohtaka, W. Huang, Q. Liu, J. Colloid Interface Sci. 254(2), (2002), 338.

[19] Z. Yuan, K. Mukai, J. Colloid Interface Sci. 270(1), (2004), 140.

[20] T. Kim, J. Lee, Y. Kim, J. -M. Kim, Z. Yuan, Mater. Trans. 50(11), (2009), 2695.

[21] N. Eustathopoulos, M. G. Nicholas, B. Drevet, Wettability at High Temperatures. Pergamon: British, (1999).

[22] C. Cheng, J. Zhao, Y. Xu, Mater. Lett. 63(17), (2009), 1478.

[23] C. Yu, J. Liu, H. Lu, P. Li, J. Chen, Intermetallics. 15, (2007), 1471.