Electro-Thermal Effect Analysis on GaAs PHEMT Based on Physical Model

Zhao Xi Wu; Gui Cui Fu; Han Tian Gu

doi:10.4028/www.scientific.net/AMR.842.192

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 842Electro-Thermal Effect Analysis on GaAs PHEMT...

Electro-Thermal Effect Analysis on GaAs PHEMT Based on Physical Model

Abstract:

Considering physical mechanisms, an electro-thermal effect model of GaAs pseudomorphic high electron mobility transistor (PHEMT) was proposed. The model included PAD capacitances, intrinsic elements and extrinsic elements, which represented the relationship of performance parameters to physical structure and temperature. By using this model, the effects of temperature to devices performance parameters could be analyzed, and the device's structure and materials' parameters could be optimized. A typical GaAs PHEMT was simulated in the EDA software. Thus, DC I-V characteristics and small-signal S parameters of PHEMT under varied temperatures could be given.

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Periodical:

Advanced Materials Research (Volume 842)

Pages:

192-195

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.842.192

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Online since:

November 2013

Authors:

Zhao Xi Wu*, Gui Cui Fu, Han Tian Gu

Keywords:

Current Voltage Characteristics, Electro-Thermal Effect, GaAs PHEMT, Scattering Parameters

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