Sensitive Ports under the Action of Different ESD Models of High-Frequency Low-Noise Silicon Bipolar Transistors

Kang Ning Dong; Xi Jun Zhang; Jie Yang; Zhe Yang

doi:10.4028/www.scientific.net/AMR.846-847.551

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 846-847Sensitive Ports under the Action of Different ESD...

Sensitive Ports under the Action of Different ESD Models of High-Frequency Low-Noise Silicon Bipolar Transistors

Abstract:

In order to find the most sensitive port of some high-frequency low-noise silicon bipolar transistors, some electrostatic discharge (ESD) experiments were taken on three typical devices, which is beneficial to study the relevant law of ESDS (ESD sensitivity). Based on the experimental results, reverse-biased emitter-base junction was compared with reverse-biased collector-base junction about failure voltage under the action of HBM ESD, MM ESD and BMM ESD. The results show that the sensitive port is different for those mentioned silicon bipolar transistors under the action of different ESD models. Consequently, the most sensitive port of high-frequency low-noise silicon bipolar transistors may be variable for different ESD models.

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Periodical:

Advanced Materials Research (Volumes 846-847)

Pages:

551-554

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.846-847.551

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Online since:

November 2013

Authors:

Kang Ning Dong*, Xi Jun Zhang, Jie Yang, Zhe Yang

Keywords:

Bipolar Transistor, Body Metal Model (BMM), ESD, Human Body Model (HBM), Metal Model (MM), Sensitive Ports

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