Theoretical Analysis on Resistance-Temperature Characteristic of Ni/HCl-PANI Composites

Sui Yu Qiu; Zhi Wei Yang; Hong Qiu

doi:10.4028/www.scientific.net/AMR.852.142

Paper Titles

Dissolution of Tungsten Carbide in Remanufacturing Coating by Plasma Spray Welding
p.121

The Research on Thermal Residual Stress of SiC_p/Al Composites
p.127

3-D Framework {[Cu(L)nX][X] (H₂O)₂} L= bipy,n=2 Constructed through C-H….Cl Hydrogen Bondings and π-π Interactions
p.132

Research on the Engineering Properties of Fly Ash as Backfill
p.137

Theoretical Analysis on Resistance-Temperature Characteristic of Ni/HCl-PANI Composites
p.142

The Impact on the Polypropylene Matrix Composites by the Cutting Size of the Automotive Interior Decoration Scrap
p.147

Effects of La₂O₃ on Microstructure and Wear Properties of Thermal Clad NiCoW/ La₂O₃ Composite Coatings
p.153

Effect of Pre-Wetting Super-Light Aggregate Reinforced Aerated Concrete
p.157

Effect of Niobium on the Morphology of Nodular Graphite in Ductile Iron
p.163

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 852Theoretical Analysis on Resistance-Temperature...

Theoretical Analysis on Resistance-Temperature Characteristic of Ni/HCl-PANI Composites

Abstract:

Ni/HCl-PANI composites were formed by depositing Ni films on HCl-doped polyaniline (HCl-PANI) substrates. A simple parallel resistor model is used to analyze the resistance-temperature (R-T) characteristic of the composite within 30-300 K. The theoretical analysis reveals that the composite exhibits a metal-semiconductor transition within a certain thickness of the Ni film or the HCl-PANI substrate. The composite shows a semiconducting behavior at temperatures over the transition temperature and a metallic conduction behavior at temperatures below the transition temperature. The transition temperature increases with increasing Ni film thickness whereas it decreases with increasing HCl-PANI substrate thickness. When the Ni film thickness exceeds its upper limit or the HCl-PANI substrate thickness is below its lower limit, the composite only shows the metallic R-T characteristic. When the HCl-PANI substrate thickness exceeds its upper limit, the composite only exhibits the semicoducting R-T characteristic.