Properties of WS2 Films Prepared by Magnetron Sputtering from a Nanostructured Target

Yuriy Irtegov; Vladimir An; Philippe Vinatier; Nikolay Sochugov; Alexander Zakharov

doi:10.4028/www.scientific.net/AMR.872.197

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 872Properties of WS2 Films Prepared by Magnetron...

Properties of WS₂ Films Prepared by Magnetron Sputtering from a Nanostructured Target

Abstract:

Tungsten disulfide films were prepared by magnetron sputtering from a laboratory and a nanostructured targets. The nanostructured target was produced from WS₂ nanolamellar particles prepared by self-propagating high-temperature synthesis in argon. The main phase in the films was 2H-WS₂. According to the X-ray analysis, the films sputtered from the laboratory target and from the nanostructured one reveal different planes of film growth orientation.

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Periodical:

Advanced Materials Research (Volume 872)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.872.197

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Online since:

December 2013

Authors:

Yuriy Irtegov, Vladimir An, Philippe Vinatier, Nikolay Sochugov, Alexander Zakharov

Keywords:

Magnetron Sputtering, Thin Film, Tungsten Disulfide

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