Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

Xian Wu Xiu; Li Xu; Cheng Qiang Zhang

doi:10.4028/www.scientific.net/AMR.873.426

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 873Influence of Sputtering Power on Molybdenum-Doped...

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

Abstract:

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along the c axis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10^-3 Ω cm at a RF power of 15 W with a Hall mobility of 11 cm² V^-1 s^-1 and a carrier concentration of 1.1×10¹⁹ cm^-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

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Periodical:

Advanced Materials Research (Volume 873)

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426-430

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https://doi.org/10.4028/www.scientific.net/AMR.873.426

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Online since:

December 2013

Authors:

Xian Wu Xiu*, Li Xu, Cheng Qiang Zhang

Keywords:

Magnetron Sputtering, Molybdenum Oxide, Transparent Conducting Oxides, Zinc Oxide (ZnO)

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